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| Bulletin I27190 02/05 50MT060WHA 50MT060WHTA "HALF-BRIDGE" IGBT MTP Features * Gen. 4 Warp Speed IGBT Technology * HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery * Very Low Conduction and Switching Losses * Optional SMD Thermistor (NTC) * Al2O3 DBC * Very Low Stray Inductance Design for High Speed Operation * UL E78996 approved Warp Speed IGBT VCES = 600V VCE(on) typ. = 2.3V @ VGE = 15V, IC = 50A TC = 25C Benefits * Optimized for Welding, UPS and SMPS Applications * Operating Frequencies > 20 kHz Hard Switching, >200 kHz Resonant Mode * Low EMI, requires Less Snubbing * Direct Mounting to Heatsink * PCB Solderable Terminals * Very Low Junction-to-Case Thermal Resistance MMTP Absolute Maximum Ratings Parameters V CES IC I CM I LM I F Max 600 @ T C = 25C @ T C = 109C 114 50 350 350 @ T C = 109C 34 200 20 2500 658 263 @ T C = 25C @ T C = 100C Units V A Collector-to-Emitter Voltage Continuos Collector Current Pulsed Collector Current Peak Switching Current Diode Continuous Forward Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation I FM V GE V ISOL PD V W www.irf.com 1 50MT060WHA, 50MT060WHTA Bulletin I27190 02/05 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameters V(BR)CES Collector-to-Emitter Breakdown Voltage V CE(on) Collector-to-Emitter Voltage Min Typ Max Units Test Conditions 600 2.3 2.5 1.72 3 3.15 3.2 2.17 6 0.4 10 1.58 1.80 1.49 1.68 1.9 2.17 250 V V GE = 0V, I C = 500A V GE = 15V, I C = 50A V GE = 15V, I C = 100A V GE = 15V, I C = 50A, TJ = 150C I C = 0.5mA V GE = 0V, V CE = 600V V GE = 0V, V CE = 600V, TJ = 150C I F = 50A, V GE = 0V I F = 50A, V GE = 0V, T J = 150C I F = 100A, V GE = 0V, T J = 25C V GE = 20V V GE(th) I CES V FM Gate Threshold Voltage Collector-to-Emiter Leaking Current Diode Forward Voltage Drop mA V I GES Gate-to-Emitter Leakage Current nA Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameters Qg Qge Qgc Eon Eoff Ets Eon Eoff Ets Cies Coes Cres trr Irr Qrr trr Irr Qrr Total Gate Charge (turn-on) Gate-Emitter Charge (turn-on) Gate-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Current Diode Recovery Charge Diode Reverse Recovery Time Diode Peak Reverse Current Diode Recovery Charge Min Typ 331 44 133 0.26 1.2 1.46 0.73 1.66 2.39 7100 510 140 82 8.3 340 137 12.7 870 Max Units Test Conditions 385 52 176 nC IC = 52A V CC = 400V VGE = 15V Internal gate resistors (see Electrical Diagram) IC = 50A, VCC = 480V, VGE = 15V, L = 200H Energy losses include tail and diode reverse recovery mJ mJ Internal gate resistors (see Electrical diagram) IC = 50A, VCC = 480V, VGE = 15V, L = 200H Energy losses include tail and diode reverse pF 97 10.6 514 153 14.8 1132 ns A nC ns A nC recovery, TJ = 150C VGE = 0V VCC = 30V f = 1.0 MHz VCC = 200V, IC = 50A di/dt = 200A/s VCC = 200V, IC = 50A di/dt = 200A/s TJ = 125C Thermistor Specifications (50MT060WHTA only) Parameters R0 (1) (1) (1) (2) Min Typ 30 4000 (2) Max Units Test Conditions k K T0 = 25C T 0 = 25C T1 = 85C Resistance Sensitivity index of the thermistor material R0 R1 T0,T1 are thermistor's temperatures = exp [(1 T 1 0 T1 )] www.irf.com 2 50MT060WHA, 50MT060WHTA Bulletin I27190 02/05 Thermal- Mechanical Specifications Parameters TJ TSTG RthJC RthCS Operating Junction Temperature Range Storage Temperature Range Junction-to-Case Case-to-Sink Clearance Creepage T Wt (3) Min IGBT, Diode Thermistor IGBT Diode Module - 40 - 40 - 40 Typ Max 150 125 125 0.38 0.8 Units C C/ W 0.06 5.5 8 3 10% 66 Nm g mm (Heatsink Compound Thermal Conductivity = 1 W/mK) (external shortest distance in air (shortest distance along the external (4) between two terminals) (3) surface of the insulating material between 2 terminals) Mounting torque to heatsink Weight (3) Standard version only i.e. without optional thermistor (4) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads 100 Maximum DC Collector Current (A) IC, Collector-to-Emitter Current (A) 120 Vge = 15V 20s Pulse Width 100 80 60 40 20 0 25 10 TJ = 150C T J = 25C 1 0.1 1 VCE, Collector-to-Emitter Voltage (V) Fig. 1 - Typical Output Characteristics 10 50 75 100 125 150 TC, Case Temperature (C) Fig. 2 - Maximum Collector Current vs. Case Temperature www.irf.com 3 50MT060WHA, 50MT060WHTA Bulletin I27190 02/05 3 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) 20 16 12 8 4 0 Vcc = 400V Ic = 52A 2.5 I C = 100A I C = 50A 2 1.5 I C= 20A 1 20 40 60 80 100 120 140 160 0 100 200 300 400 TJ, Junction Temperature (C) Fig. 3 - Typical Collector-to-Emitter Voltage vs. Junction Temperature QG, Total Gate Charge (nC) Fig. 4 - Typical Gate Charge vs. Gate-toEmitter Voltage 100 Instantaneous Forward Current - I F (A) 10 TJ = 150C TJ = 125C TJ = 25C 1 0.4 0.8 1.2 1.6 2 2.4 Forward Voltage Drop - VFM (V) Fig. 5 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 4 www.irf.com 50MT060WHA, 50MT060WHTA Bulletin I27190 02/05 160 Vr = 200V 100 Vr = 200V 140 I F = 50A, Tj = 125C I F = 50A, Tj = 125C I RRM (A) 120 t rr (ns) 10 I F = 50A, Tj = 25C 100 I F = 50A, Tj = 25C 80 60 100 dif /dt - (A/s) 1000 1 100 di f /dt - (A/s) 1000 Fig. 6 - Typical Reverse Recovery vs. dif/dt Fig. 7 - Typical Reverse Recovery Current vs. dif/dt 2000 Vr = 200V 1500 I F = 50A, Tj = 125C Q RR (nC) 1000 500 I = 50A, Tj = 25C F 0 100 dif /dt - (A/s) Fig. 8 - Typical Stored Charge vs. di f/dt 1000 www.irf.com 5 50MT060WHA, 50MT060WHTA Bulletin I27190 02/05 Outline Table Functional Diagram Electrical Diagram Resistance in ohms Dimensions in millimetres Note: unused terminals are not assembled in the package 6 www.irf.com 50MT060WHA, 50MT060WHTA Bulletin I27190 02/05 Ordering Information Table Device Code 50 1 MT 060 2 3 W 4 H 5 T 6 A 7 1 2 3 4 5 6 - Current Rating (50 = 50A) Essential Part Number Voltage rating (060 = 600V) Speed/ Type Special Option none = no special option T = Thermistor (W = Warp IGBT) = Half Bridge) Circuit Configuration (H 7 - A = Al 2O3 DBC Substrate Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 02/05 www.irf.com 7 |
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